| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 600 V |
| Current Rating | 25.0 A |
| Case/Package | TO-263-3 |
| Polarity | N-Channel |
| Power Dissipation | 80000 mW |
| Input Capacitance | 760 pF |
| Rise Time | 8.50 ns |
| Breakdown Voltage (Collector to Emitter) | 600 V |
| Thermal Resistance | 62.5 ℃/W |
| Reverse recovery time | 37 ns |
| Input Power (Max) | 80 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 80000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Width | 9.35 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
You won"t need to worry about any lagging in your circuit with this STGB14NC60KDT4 IGBT transistor from STMicroelectronics. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 80000 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It is made in a single configuration.
ST Microelectronics
16 Pages / 0.52 MByte
ST Microelectronics
1 Pages / 0.13 MByte
ST Microelectronics
Trans IGBT Chip N-CH 600V 25A 80000mW 3Pin(2+Tab) D2PAK T/R
ST Microelectronics
Trans IGBT Chip N-CH 600V 25A 80000mW 3Pin(2+Tab) D2PAK T/R
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