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STGB30H60DLLFBAG
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STGB30H60DLLFBAG Datasheet PDF - ST Microelectronics

Manufacturer:ST Microelectronics
Case Package:TO-263-3
Description:600V, 30A high speed trench gate field-stop IGBT
Documentation:STGB30H60DLLFBAG Datasheet (17 Pages)Package Outline Dimension on11 Page12 Page13 Page14 Page15 Page
STGB30H60DLLFBAG User Reference Manual Guide (60 Pages)STGB30H60DLLFBAG Application Note (35 Pages)
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STGB30H60DLLFBAG Datasheet PDF (17 Pages)
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STGB30H60DLLFBAG Specifications

TYPEDESCRIPTION
Mounting StyleSurface Mount
Number of Pins3 Pin
Case/PackageTO-263-3
Power Dissipation260000 mW
Breakdown Voltage (Collector to Emitter)600 V
Input Power (Max)260 W
Operating Temperature (Max)175 ℃
Operating Temperature (Min)-55 ℃
Power Dissipation (Max)260000 mW
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STGB30H60DLLFBAG Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusActive
PackagingTape & Reel (TR)
Operating Temperature-55℃ ~ 175℃ (TJ)
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STGB30H60DLLFBAG Documents

STGB30H60DLLFBAG Datasheet
ST Microelectronics
17 Pages / 0.98 MByte
STGB30H60DLLFBAG User Reference Manual Guide
ST Microelectronics
60 Pages / 4.35 MByte
STGB30H60DLLFBAG Application Note
ST Microelectronics
35 Pages / 2.4 MByte

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STGB30H60DLLFBAG Datasheet PDF
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600V, 30A high speed trench gate field-stop IGBT
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