| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-263-3 |
| Number of Positions | 3 Position |
| Power Dissipation | 258 W |
| Breakdown Voltage (Collector to Emitter) | 650 V |
| Reverse recovery time | 140 ns |
| Input Power (Max) | 258 W |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 258 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 10.4 mm |
| Size-Width | 9.35 mm |
| Size-Height | 4.6 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
This powerful and secure STGB30M65DF2 IGBT transistor from STMicroelectronics will make sure your circuit works properly. It has a maximum collector emitter voltage of 650 V. Its maximum power dissipation is 258000 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This device utilizes field stop|trench technology. This IGBT transistor has an operating temperature range of -55 °C to 175 °C. It is made in a single configuration.
ST Microelectronics
19 Pages / 0.51 MByte
ST Microelectronics
19 Pages / 0.67 MByte
ST Microelectronics
STMICROELECTRONICS STGB30M65DF2 IGBT Single Transistor, 60A, 1.55V, 258W, 650V, TO-263, 3Pins
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