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STGB30V60F
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STGB30V60F Datasheet PDF - ST Microelectronics

Manufacturer:ST Microelectronics
Category:IGBTs
Case Package:TO-263-3
Description:Trans IGBT Chip N-CH 600V 60A 260000mW 3Pin(2+Tab) D2PAK T/R
Documentation:STGB30V60F Datasheet (19 Pages)Package Outline Dimension on11 Page12 Page13 Page14 Page15 Page
STGB30V60F User Reference Manual Guide (51 Pages)STGB30V60F Application Note (35 Pages)
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STGB30V60F Datasheet PDF (19 Pages)
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STGB30V60F Specifications

TYPEDESCRIPTION
Mounting StyleSurface Mount
Number of Pins3 Pin
Case/PackageTO-263-3
Power Dissipation260000 mW
Breakdown Voltage (Collector to Emitter)600 V
Input Power (Max)260 W
Operating Temperature (Max)175 ℃
Operating Temperature (Min)-55 ℃
Power Dissipation (Max)260000 mW
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STGB30V60F Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusActive
PackagingTape & Reel (TR)
Operating Temperature-55℃ ~ 175℃ (TJ)
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STGB30V60F Documents

STGB30V60F Datasheet
ST Microelectronics
19 Pages / 1.41 MByte
STGB30V60F User Reference Manual Guide
ST Microelectronics
51 Pages / 2.12 MByte
STGB30V60F Application Note
ST Microelectronics
35 Pages / 2.4 MByte

STGB30V60 Documents

STGB30V60F Datasheet PDF
ST Microelectronics
Trans IGBT Chip N-CH 600V 60A 260000mW 3Pin(2+Tab) D2PAK T/R
STGB30V60DF Datasheet PDF
ST Microelectronics
Trans IGBT Chip N-CH 600V 60A 3Pin D2PAK T/R
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