| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-263-3 |
| Number of Positions | 3 Position |
| Power Dissipation | 75 W |
| Input Capacitance | 470 pF |
| Breakdown Voltage (Collector to Emitter) | 1200 V |
| Thermal Resistance | 62.5 ℃/W |
| Reverse recovery time | 51 ns |
| Input Power (Max) | 75 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 75000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
This STGB3NC120HDT4 IGBT transistor from STMicroelectronics is perfect if your circuit contains high currents passing through it. Its maximum power dissipation is 75000 mW. It has a maximum collector emitter voltage of 1200 V. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. It is made in a single configuration. This IGBT transistor has an operating temperature range of -55 °C to 150 °C.
ST Microelectronics
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