| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 1.20 kV |
| Current Rating | 5.00 A |
| Case/Package | TO-252-3 |
| Power Rating | 75 W |
| Number of Positions | 3 Position |
| Power Dissipation | 75 W |
| Input Capacitance | 430 pF |
| Rise Time | 170 ns |
| Breakdown Voltage (Collector to Emitter) | 1200 V |
| Thermal Resistance | 100 ℃/W |
| Input Power (Max) | 75 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 75 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 6.6 mm |
| Size-Width | 6.2 mm |
| Size-Height | 2.4 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The STGD5NB120SZT4 is a 1200V Low Drop Internally Clamped IGBT that utilizes the advanced Power MESH™ process resulting in an excellent trade-off between switching performance and low on-state behaviour. The IGBT is ideal for use in inrush current limitation and pre-heating for electronic lamp ballast. Improved switch-off energy spread versus increasing temperature result in reduced switching losses.
● Low on-voltage drop
● High current capability
● Off losses include tail current
● High voltage clamping, low VCE (sat) for reduced conduction losses
● Tight parameter distribution for design simplification and easy paralleling
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