| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 600 V |
| Current Rating | 15.0 A |
| Case/Package | TO-252-3 |
| Number of Positions | 3 Position |
| Power Dissipation | 56 W |
| Breakdown Voltage (Collector to Emitter) | 600 V |
| Reverse recovery time | 21 ns |
| Input Power (Max) | 56 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 56000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
This STGD6NC60HDT4 IGBT transistor from STMicroelectronics will work perfectly in your circuit. Its maximum power dissipation is 56000 mW. It has a maximum collector emitter voltage of 600 V. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. It is made in a single configuration. This IGBT transistor has an operating temperature range of -55 °C to 150 °C.
ST Microelectronics
15 Pages / 0.45 MByte
ST Microelectronics
16 Pages / 0.43 MByte
ST Microelectronics
1 Pages / 0.13 MByte
ST Microelectronics
Trans IGBT Chip N-CH 600V 15A 56000mW 3Pin(2+Tab) DPAK T/R
ST Microelectronics
Trans IGBT Chip N-CH 600V 15A 62500mW 3Pin(3+Tab) IPAK Tube
ST Microelectronics
Trans IGBT Chip N-CH 600V 15A 56000mW 3Pin(2+Tab) DPAK T/R
ST Microelectronics
Trans IGBT Chip N-CH 600V 15A 3Pin (2+Tab) DPAK
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
