| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 600 V |
| Current Rating | 10.0 A |
| Case/Package | TO-220-3 |
| Number of Positions | 3 Position |
| Polarity | N-Channel |
| Power Dissipation | 25 W |
| Drain to Source Voltage (Vds) | 600 V |
| Continuous Drain Current (Ids) | 20.0 A |
| Rise Time | 460 ns |
| Breakdown Voltage (Collector to Emitter) | 600 V |
| Reverse recovery time | 37 ns |
| Input Power (Max) | 25 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 25 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 10.4 mm |
| Size-Width | 4.6 mm |
| Size-Height | 20 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The STGF10NB60SD is a low drop IGBT with soft and fast recovery diode. This IGBT utilizes the advanced Power MESH™ process featuring extremely low ON-state voltage drop in low-frequency working conditions (up to 1kHz). It is suitable for light dimmer and static relays.
● Low on-voltage drop (VCE(sat))
● High current capability
● Very soft ultrafast recovery anti-parallel diode
ST Microelectronics
15 Pages / 0.41 MByte
ST Microelectronics
20 Pages / 2.6 MByte
ST Microelectronics
Trans IGBT Chip N-CH 600V 23A 25000mW 3Pin(3+Tab) TO-220FP Tube
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