| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 600 V |
| Current Rating | 25.0 A |
| Case/Package | TO-220-3 |
| Number of Positions | 3 Position |
| Polarity | N-Channel |
| Power Dissipation | 80 W |
| Input Capacitance | 760 pF |
| Rise Time | 8.5 ns |
| Breakdown Voltage (Collector to Emitter) | 600 V |
| Thermal Resistance | 62.5 ℃/W |
| Reverse recovery time | 37 ns |
| Input Power (Max) | 80 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 80000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 10.4 mm |
| Size-Width | 4.6 mm |
| Size-Height | 9.15 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The STGP14NC60KD is a short-circuit rugged IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low ON-state behaviour. It is suitable for SMPS and PFC in both hard switch and resonant topologies.
● Low on-voltage drop (VCE(sat))
● Low CRES/CIES ratio (no cross-conduction susceptibility)
● Very soft ultrafast recovery anti-parallel diode
● Switching losses include diode recovery energy
● 10µs Short-circuit withstand time
ST Microelectronics
16 Pages / 0.52 MByte
ST Microelectronics
20 Pages / 2.6 MByte
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30 Pages / 0.31 MByte
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1 Pages / 0.13 MByte
ST Microelectronics
Trans IGBT Chip N-CH 600V 25A 80000mW 3Pin(3+Tab) TO-220 Tube
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