| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Power Dissipation | 115000 mW |
| Breakdown Voltage (Collector to Emitter) | 600 V |
| Reverse recovery time | 103 ns |
| Input Power (Max) | 115 W |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 115 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 10.4 mm |
| Size-Width | 4.6 mm |
| Size-Height | 15.75 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
Minimize the current at your gate with the STGP15H60DF IGBT transistor from STMicroelectronics. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 115000 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This IGBT transistor has an operating temperature range of -55 °C to 175 °C. It is made in a single configuration.
ST Microelectronics
23 Pages / 1.81 MByte
ST Microelectronics
Trans IGBT Chip N-CH 600V 30A 115000mW 3Pin(3+Tab) TO-220 Tube
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