| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Polarity | N-Channel |
| Power Dissipation | 125000 mW |
| Rise Time | 7.00 ns |
| Breakdown Voltage (Collector to Emitter) | 600 V |
| Reverse recovery time | 31 ns |
| Input Power (Max) | 125 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 125000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 10.4 mm |
| Size-Width | 4.6 mm |
| Size-Height | 9.15 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
You won"t need to worry about any lagging in your circuit with this STGP19NC60WD IGBT transistor from STMicroelectronics. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 125000 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It is made in a single configuration. This IGBT transistor has an operating temperature range of -55 °C to 150 °C.
ST Microelectronics
15 Pages / 0.3 MByte
ST Microelectronics
16 Pages / 0.28 MByte
ST Microelectronics
Trans IGBT Chip N-CH 600V 35A 125000mW 3Pin(3+Tab) TO-220 Tube
ST Microelectronics
IGBT Single Transistor, 40A, 2.5V, 130W, 600V, TO-220, 3Pins
ST Microelectronics
Trans IGBT Chip N-CH 600V 40A 125000mW 3Pin(3+Tab) TO-220 Tube
ST Microelectronics
Trans IGBT Chip N-CH 600V 40A 3Pin(3+Tab) TO-220 Tube
ST Microelectronics
Trans IGBT Chip N-CH 600V 40A 130000mW 3Pin(3+Tab) TO-220 Tube
ST Microelectronics
Trans IGBT Chip N-CH 600V 40A 3Pin(3+Tab) TO-220 Tube
ST Microelectronics
Trans IGBT Chip N-CH 600V 40A 125000mW 3Pin(3+Tab) TO-220 Tube
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
