| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 600 V |
| Current Rating | 30.0 A |
| Case/Package | TO-247-3 |
| Polarity | N-Channel |
| Power Dissipation | 200 W |
| Rise Time | 11.0 ns |
| Breakdown Voltage (Collector to Emitter) | 600 V |
| Input Power (Max) | 200 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 200000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 15.75 mm |
| Size-Width | 5.15 mm |
| Size-Height | 20.15 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
This powerful and secure STGW20NC60V IGBT transistor from STMicroelectronics will make sure your circuit works properly. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 200000 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It is made in a single configuration. This device is made with powermesh technology.
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