| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247-3 |
| Power Dissipation | 260000 mW |
| Breakdown Voltage (Collector to Emitter) | 600 V |
| Reverse recovery time | 110 ns |
| Input Power (Max) | 260 W |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -40 ℃ |
| Power Dissipation (Max) | 260000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Operating Temperature | -40℃ ~ 175℃ (TJ) |
This powerful and secure STGW30H60DF IGBT transistor from STMicroelectronics will make sure your circuit works properly. Its maximum power dissipation is 260000 mW. It has a maximum collector emitter voltage of 600 V. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This IGBT transistor has an operating temperature range of -40 °C to 175 °C. It is made in a single configuration.
ST Microelectronics
24 Pages / 1.89 MByte
ST Microelectronics
Trans IGBT Chip N-CH 600V 60A 260000mW 3Pin(3+Tab) TO-247 Tube
ST Microelectronics
Trans IGBT Chip N-CH 600V 60A 260000mW 3Pin(3+Tab) TO-247 Tube
ST Microelectronics
Trans IGBT Chip N-CH 600V 60A 260000mW 3Pin(3+Tab) TO-247 Tube
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