| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 1.20 kV |
| Current Rating | 30.0 A |
| Case/Package | TO-247-3 |
| Number of Positions | 3 Position |
| Polarity | N-Channel |
| Power Dissipation | 220 W |
| Rise Time | 11.0 ns |
| Breakdown Voltage (Collector to Emitter) | 1200 V |
| Reverse recovery time | 152 ns |
| Input Power (Max) | 220 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 220000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 15.75 mm |
| Size-Width | 5.15 mm |
| Size-Height | 20.15 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The STGW30NC120HD is a N-channel very fast PowerMESH™ IGBT for use with induction heating and soft switching application. Using the latest high voltage technology based on its patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, with outstanding performances. The suffix H identifies a family optimized for high frequency application in order to achieve very high switching performances (reduced tfall) maintaining a low voltage drop.
● Low on-losses
● Low on-voltage drop (Vcesat)
● High current capability
● High input impedance (voltage driven)
● Low gate charge
ST Microelectronics
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IGBT Single Transistor, 60A, 2.75V, 220W, 1.2kV, TO-247, 3Pins
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N-channel 1200V - 30A - TO-247 very fast PowerMESH™ IGBT
ST Microelectronics
N-channel 1200V - 30A - TO-247 very fast PowerMESH™ IGBT
ST Microelectronics
N-channel 1200V - 30A - TO-247 very fast PowerMESH™ IGBT
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