TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 600 V |
Current Rating | 35.0 A |
Case/Package | TO-247-3 |
Number of Positions | 3 Position |
Polarity | N-Channel |
Power Dissipation | 200 W |
Drain to Source Voltage (Vds) | 600 V |
Continuous Drain Current (Ids) | 70.0 A |
Rise Time | 70 ns |
Breakdown Voltage (Collector to Emitter) | 600 V |
Reverse recovery time | 44 ns |
Input Power (Max) | 200 W |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 200 W |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Size-Length | 15.75 mm |
Size-Width | 5.15 mm |
Size-Height | 20.15 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
The STGW35NB60SD is a N-channel low drop PowerMESH™ IGBT for use with light dimmer and static relays. Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBT. The PowerMESH™ IGBT with outstanding performances.
● Low on-voltage drop (VCEsat)
● Low input capacitance
● High current capability
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Trans IGBT Chip N-CH 600V 70A 200000mW 3Pin(3+Tab) TO-247 Tube
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