TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Case/Package | TO-247-3 |
Number of Positions | 3 Position |
Power Dissipation | 250 W |
Breakdown Voltage (Collector to Emitter) | 1300 V |
Input Power (Max) | 250 W |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 250000 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Not Recommended for New Designs |
Packaging | Tube |
Size-Width | 5.15 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
The STGW38IH130D is a 1300V Very Fast IGBT that developed using advanced PowerMESH™ technology. This process guarantees an excellent trade-off between switching performance and low on-state behaviour. The IGBT is well suited for resonant or soft-switching applications. Improved switch-off energy spread versus increasing temperature result in reduced switching losses.
● Low saturation voltage
● High current capability
● Low switching loss
● Low static and peak forward voltage drop freewheeling diode
● Low VCE (sat) for reduced conduction losses
● Tight parameter distribution for design simplification and easy paralleling
ST Microelectronics
1 Pages / 0.29 MByte
ST Microelectronics
Trans IGBT Chip N-CH 1300V 63A 250000mW 3Pin(3+Tab) TO-247 Tube
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