| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 4 Pin |
| Case/Package | TO-247-4 |
| Number of Positions | 4 Position |
| Power Dissipation | 283 W |
| Breakdown Voltage (Collector to Emitter) | 650 V |
| Reverse recovery time | 62 ns |
| Input Power (Max) | 283 W |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 283000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
IGBT Trench Field Stop 650V 80A 283W Through Hole TO-247-4L
ST Microelectronics
17 Pages / 0.97 MByte
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17 Pages / 0.18 MByte
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16 Pages / 1.23 MByte
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3 Pages / 0.11 MByte
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Trans IGBT Chip N-CH 650V 80A 283000mW 3Pin(3+Tab) TO-247 Tube
ST Microelectronics
Trans IGBT Chip N-CH 650V 80A 283000mW 3Pin(3+Tab) TO-247 Tube
ST Microelectronics
Trans IGBT Chip N-CH 650V 80A 283000mW 4Pin(4+Tab) TO-247 Tube
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