| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247-3 |
| Power Dissipation | 283 W |
| Breakdown Voltage (Collector to Emitter) | 600 V |
| Input Power (Max) | 283 W |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 283 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 15.75 mm |
| Size-Width | 5.15 mm |
| Size-Height | 20.15 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
This STGW40V60F IGBT transistor from STMicroelectronics is an electronic switch that can handle large currents with very little gate current drive. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 62500 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This device is made with field stop|trench technology. It is made in a single configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C.
ST Microelectronics
24 Pages / 1.84 MByte
ST Microelectronics
25 Pages / 1.82 MByte
ST Microelectronics
Trans IGBT Chip N-CH 600V 80A 283000mW 3Pin(3+Tab) TO-247 Tube
ST Microelectronics
Trans IGBT Chip N-CH 600V 80A 62500mW 3Pin(3+Tab) TO-247 Tube
ST Microelectronics
Trans IGBT Chip N-CH 600V 80A 283000mW 3Pin(3+Tab) TO-247 Tube
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