TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Case/Package | TO-247-3 |
Power Dissipation | 360000 mW |
Breakdown Voltage (Collector to Emitter) | 650 V |
Input Power (Max) | 360 W |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 360000 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
You can use this STGW60H65F IGBT transistor from STMicroelectronics as an electronic switch. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 360000 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It is made in a single configuration.
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