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STGW75M65DF2
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STGW75M65DF2 Datasheet PDF - ST Microelectronics

Manufacturer:ST Microelectronics
Case Package:TO-247-3
Description:Trans IGBT Chip N-CH 650V 120A 468000mW 3Pin(3+Tab) TO-247 Tube
Documentation:STGW75M65DF2 Datasheet (17 Pages)STGW75M65DF2 User Reference Manual Guide (51 Pages)STGW75M65DF2 Application Note (35 Pages)
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STGW75M65DF2 Datasheet PDF (17 Pages)
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STGW75M65DF2 Specifications

TYPEDESCRIPTION
Mounting StyleThrough Hole
Number of Pins3 Pin
Case/PackageTO-247-3
Power Dissipation468 W
Breakdown Voltage (Collector to Emitter)650 V
Reverse recovery time165 ns
Input Power (Max)468 W
Operating Temperature (Max)175 ℃
Operating Temperature (Min)-55 ℃
Power Dissipation (Max)468000 mW
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STGW75M65DF2 Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusActive
PackagingTube
Operating Temperature-55℃ ~ 175℃ (TJ)
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STGW75M65DF2 Documents

STGW75M65DF2 Datasheet
ST Microelectronics
17 Pages / 0.97 MByte
STGW75M65DF2 User Reference Manual Guide
ST Microelectronics
51 Pages / 2.12 MByte
STGW75M65DF2 Application Note
ST Microelectronics
35 Pages / 2.4 MByte
STGW75M65DF2 Packaging
ST Microelectronics
18 Pages / 0.99 MByte

STGW75M65 Documents

STGW75M65DF2 Datasheet PDF
ST Microelectronics
Trans IGBT Chip N-CH 650V 120A 468000mW 3Pin(3+Tab) TO-247 Tube
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