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STGW80H65DFB-4
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STGW80H65DFB-4 Datasheet PDF - ST Microelectronics

Manufacturer:ST Microelectronics
Category:IGBTs
Case Package:TO-247-4
Description:Trans IGBT Chip N-CH 650V 120A 469000mW 4Pin(4+Tab) TO-247 Tube
Documentation:STGW80H65DFB-4 Datasheet (22 Pages)Package Outline Dimension on12 Page13 Page14 Page15 Page16 Page
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STGW80H65DFB-4 Datasheet PDF (22 Pages)
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STGW80H65DFB-4 Specifications

TYPEDESCRIPTION
Mounting StyleThrough Hole
Number of Pins4 Pin
Case/PackageTO-247-4
Power Dissipation469000 mW
Breakdown Voltage (Collector to Emitter)650 V
Reverse recovery time85 ns
Input Power (Max)469 W
Operating Temperature (Max)175 ℃
Operating Temperature (Min)-55 ℃
Power Dissipation (Max)469000 mW
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STGW80H65DFB-4 Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusActive
PackagingTube
Operating Temperature-55℃ ~ 175℃ (TJ)
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STGW80H65DFB-4 Documents

STGW80H65DFB-4 Datasheet
ST Microelectronics
22 Pages / 1.42 MByte

STGW80H65 Documents

STGW80H65DFB Datasheet PDF
ST Microelectronics
Trans IGBT Chip N-CH 650V 120A 469000mW 3Pin(3+Tab) TO-247 Tube
STGW80H65FB Datasheet PDF
ST Microelectronics
Trans IGBT Chip N-CH 650V 120A 469000mW 3Pin(3+Tab) TO-247 Tube
STGW80H65DFB-4 Datasheet PDF
ST Microelectronics
Trans IGBT Chip N-CH 650V 120A 469000mW 4Pin(4+Tab) TO-247 Tube
STGW80H65FB-4 Datasheet PDF
ST Microelectronics
Trans IGBT Chip N-CH 650V 120A 469000mW 4Pin(4+Tab) TO-247 Tube
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