| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247-3 |
| Power Dissipation | 469000 mW |
| Breakdown Voltage (Collector to Emitter) | 650 V |
| Input Power (Max) | 469 W |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 469000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
You can use this STGW80H65FB IGBT transistor from STMicroelectronics as an electronic switch. Its maximum power dissipation is 469000 mW. It has a maximum collector emitter voltage of 650 V. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It is made in a single configuration. This IGBT transistor has an operating temperature range of -55 °C to 175 °C. This device utilizes field stop|trench technology.
ST Microelectronics
18 Pages / 1.43 MByte
ST Microelectronics
14 Pages / 0.74 MByte
ST Microelectronics
Trans IGBT Chip N-CH 650V 120A 469000mW 3Pin(3+Tab) TO-247 Tube
ST Microelectronics
Trans IGBT Chip N-CH 650V 120A 469000mW 3Pin(3+Tab) TO-247 Tube
ST Microelectronics
Trans IGBT Chip N-CH 650V 120A 469000mW 4Pin(4+Tab) TO-247 Tube
ST Microelectronics
Trans IGBT Chip N-CH 650V 120A 469000mW 4Pin(4+Tab) TO-247 Tube
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