| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247-3 |
| Number of Positions | 3 Position |
| Power Dissipation | 468 W |
| Breakdown Voltage (Collector to Emitter) | 1200 V |
| Reverse recovery time | 355 ns |
| Input Power (Max) | 468 W |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 468000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
The STGWA40M120DF3 is a Trench gate field-stop IGBT developed using an advanced proprietary Trench gate field-stop structure. The device is part of the M series of IGBT, which represent an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss and short-circuit capability are essential. Furthermore, a positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.
● Tight parameters distribution
● Safer paralleling
● Low thermal resistance
● Soft and fast recovery anti-parallel diode
● 10µs Short-circuit withstand time
ST Microelectronics
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ST Microelectronics
Trans IGBT Chip N-CH 1200V 80A 468000mW 3Pin(3+Tab) TO-247 Tube
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