STGWA50IH65DF Datasheet PDF - ST Microelectronics

Manufacturer:	ST Microelectronics
Case Package:	TO-247-3
Description:	Trans IGBT Chip N-CH 650V 100A 300000mW 3-Pin(3+Tab) TO-247 Tube
Pictures:	3D Model Symbol Footprint Pinout Product Pictures

ADatasheet has not yet included the datasheet for STGWA50IH65DF

If necessary, please send a supplementary document request to the administrator

STGWA50IH65DF Specifications

TYPE	DESCRIPTION
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Number of Positions	3 Position
Power Dissipation	300 W
Breakdown Voltage (Collector to Emitter)	650 V
Input Power (Max)	300 W
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	300000 mW

72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.

Popular Parts

New Parts

Popular Parts