| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-3-3 |
| Power Dissipation | 283000 mW |
| Breakdown Voltage (Collector to Emitter) | 600 V |
| Input Power (Max) | 283 W |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -40 ℃ |
| Power Dissipation (Max) | 283 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 15.7 mm |
| Size-Width | 5.7 mm |
| Size-Height | 26.7 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
Don"t be afraid to step up the amps in your device when using this STGWT40V60DLF IGBT transistor from STMicroelectronics. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 283000 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This IGBT transistor has an operating temperature range of -40 °C to 175 °C. It is made in a single configuration.
ST Microelectronics
17 Pages / 1.25 MByte
ST Microelectronics
Trans IGBT Chip N-CH 600V 80A 283000mW 3Pin(3+Tab) TO-3P Tube
ST Microelectronics
Trans IGBT Chip N-CH 600V 80A 283000mW 3Pin(3+Tab) TO-3P Tube
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