| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-3-3 |
| Power Dissipation | 375000 mW |
| Input Capacitance | 7792 pF |
| Breakdown Voltage (Collector to Emitter) | 650 V |
| Thermal Resistance | 50 ℃/W |
| Input Power (Max) | 375 W |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -40 ℃ |
| Power Dissipation (Max) | 375 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 15.8 mm |
| Size-Width | 5 mm |
| Size-Height | 20.1 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
The STGWT60H65FB IGBT transistor from STMicroelectronics is perfect to use as an electronic switch eliminating the current at the gate. It has a maximum collector emitter voltage of 650 V. Its maximum power dissipation is 375000 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This IGBT transistor has an operating temperature range of -40 °C to 175 °C. It is made in a single configuration.
ST Microelectronics
16 Pages / 1.19 MByte
ST Microelectronics
20 Pages / 1.59 MByte
ST Microelectronics
Trans IGBT Chip N-CH 650V 80A 375000mW 3Pin(3+Tab) TO-3P Tube
ST Microelectronics
Trans IGBT Chip N-CH 650V 80A 375000mW 3Pin(3+Tab) TO-3P Tube
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