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STGYA120M65DF2
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STGYA120M65DF2 Datasheet PDF - ST Microelectronics

Manufacturer:ST Microelectronics
Case Package:TO-247-3
Description:Trans IGBT Chip N-CH 650V 160A 625000mW 3Pin(3+Tab) Max247 Tube
Documentation:STGYA120M65DF2 Datasheet (16 Pages)STGYA120M65DF2 User Reference Manual Guide (51 Pages)STGYA120M65DF2 Application Note (35 Pages)
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STGYA120M65DF2 Datasheet PDF (16 Pages)
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STGYA120M65DF2 Specifications

TYPEDESCRIPTION
Mounting StyleThrough Hole
Number of Pins3 Pin
Case/PackageTO-247-3
Power Dissipation625000 mW
Breakdown Voltage (Collector to Emitter)650 V
Reverse recovery time202 ns
Input Power (Max)625 W
Fall Time (Max)164 ns
Fall Time (Max)48 ns
Operating Temperature (Max)175 ℃
Operating Temperature (Min)-55 ℃
Power Dissipation (Max)625000 mW
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STGYA120M65DF2 Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusActive
PackagingTube
Operating Temperature-55℃ ~ 175℃ (TJ)
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STGYA120M65DF2 Documents

STGYA120M65DF2 Datasheet
ST Microelectronics
16 Pages / 0.93 MByte
STGYA120M65DF2 User Reference Manual Guide
ST Microelectronics
51 Pages / 2.12 MByte
STGYA120M65DF2 Application Note
ST Microelectronics
35 Pages / 2.4 MByte

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ST Microelectronics
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STGYA120M65DF2 Datasheet PDF
ST Microelectronics
Trans IGBT Chip N-CH 650V 160A 625000mW 3Pin(3+Tab) Max247 Tube
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