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STGYA120M65DF2AG
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STGYA120M65DF2AG Datasheet PDF - ST Microelectronics

Manufacturer:ST Microelectronics
Case Package:TO-247-3
Description:Trans IGBT Chip N-CH 650V 160A 625000mW Automotive 3Pin(3+Tab) Max247 Tube
Documentation:STGYA120M65DF2AG User Reference Manual Guide (60 Pages)STGYA120M65DF2AG Application Note (35 Pages)
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STGYA120M65DF2AG Datasheet PDF (60 Pages)
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STGYA120M65DF2AG Specifications

TYPEDESCRIPTION
Mounting StyleThrough Hole
Number of Pins3 Pin
Case/PackageTO-247-3
Number of Positions3 Position
Power Dissipation625 W
Breakdown Voltage (Collector to Emitter)650 V
Reverse recovery time202 ns
Input Power (Max)625 W
Operating Temperature (Max)175 ℃
Operating Temperature (Min)-55 ℃
Power Dissipation (Max)625000 mW

STGYA120M65DF2AG Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusUnknown
PackagingTube
Operating Temperature-55℃ ~ 175℃ (TJ)

STGYA120M65DF2AG Documents

STGYA120M65DF2AG User Reference Manual Guide
ST Microelectronics
60 Pages / 4.35 MByte
STGYA120M65DF2AG Application Note
ST Microelectronics
35 Pages / 2.4 MByte
STGYA120M65DF2AG Packaging
ST Microelectronics
18 Pages / 0.73 MByte
STGYA120M65DF2AG Notice File
ST Microelectronics
5 Pages / 0.04 MByte

STGYA120M65DF2 Documents

STGYA120M65DF2 Datasheet PDF
ST Microelectronics
Trans IGBT Chip N-CH 650V 160A 625000mW 3Pin(3+Tab) Max247 Tube
STGYA120M65DF2AG Datasheet PDF
ST Microelectronics
Trans IGBT Chip N-CH 650V 160A 625000mW Automotive 3Pin(3+Tab) Max247 Tube
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