STH15NB50FI Datasheet PDF - ST Microelectronics

DESCRIPTION

●Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.

●■ TYPICAL RDS(on) = 0.33 Ω

●■ EXTREMELY HIGH dv/dt CAPABILITY

●■ ± 30V GATE TO SOURCE VOLTAGE RATING

●■ 100% AVALANCHE TESTED

●■ VERY LOW INTRINSIC CAPACITANCES

●■ GATE CHARGE MINIMIZED

●APPLICATIONS

●■ HIGH CURRENT, HIGH SPEED SWITCHING

●■ SWITCH MODE POWER SUPPLIES (SMPS)

●■ DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE