| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 10 Pin |
| Voltage Rating (DC) | 30.0 V |
| Current Rating | 20.0 A |
| Case/Package | PolarPAK-10 |
| Number of Channels | 1 Channel |
| Drain to Source Resistance (on) (Rds) | 7.8 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 5.2 W |
| Threshold Voltage | 2.5 V |
| Input Capacitance | 1.38 nF |
| Gate Charge | 13.4 nC |
| Drain to Source Voltage (Vds) | 30 V |
| Breakdown Voltage (Drain to Source) | 30 V |
| Breakdown Voltage (Gate to Source) | ±16.0 V |
| Continuous Drain Current (Ids) | 20.0 A |
| Rise Time | 50 ns |
| Input Capacitance (Ciss) | 1380pF @25V(Vds) |
| Input Power (Max) | 5.2 W |
| Fall Time | 15 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 5.2W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Obsolete |
| Packaging | Tape & Reel (TR) |
| Size-Length | 6.15 mm |
| Size-Width | 5.16 mm |
| Size-Height | 0.8 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
Description
●This Power MOSFET is the latest development of STMicroelectronics unique “single feature size” strip-based process. The resulting transistor shows extremely high packing density for low on resistance, moreover the double sides cooling package with ultra low junction to case thermal resistance allows to handle higher levels of current.
●Features
●■ Ultra low top and bottom junction to case thermal resistance
●■ Very low capacitances
●■ 100% Rg tested
●■ Fully encapsulated die
●■ 100% Matte tin finish (in compliance with the 2002/95/EC european directive)
●■ PolarPAK® is a trademark of VISHAY
●Application
●■ Switching applications
ST Microelectronics
16 Pages / 0.5 MByte
ST Microelectronics
1 Pages / 0.13 MByte
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