| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Case/Package | 3X3-8 |
| Number of Positions | 8 Position |
| Drain to Source Resistance (on) (Rds) | 0.015 Ω |
| Polarity | N-Channel |
| Power Dissipation | 50 W |
| Threshold Voltage | 1 V |
| Drain to Source Voltage (Vds) | 30 V |
| Rise Time | 4.2 ns |
| Input Capacitance (Ciss) | 900pF @25V(Vds) |
| Input Power (Max) | 2 W |
| Fall Time | 3.5 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 2W (Ta), 50W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The STL10N3LLH5 is a PowerFLAT™ N-channel Power MOSFET developed using STripFET™ V technology. The device has been optimized to achieve very low ON-state resistance, contributing to a FOM that is among the best in its class.
● RDS (ON) x Qg industry benchmark
● Extremely low ON-resistance RDS (ON)
● Very low switching gate charge
● High avalanche ruggedness
● Low gate drive power losses
● -55 to 150°C Operating junction temperature range
ST Microelectronics
14 Pages / 0.68 MByte
ST Microelectronics
14 Pages / 0.68 MByte
ST Microelectronics
5 Pages / 0.04 MByte
ST Microelectronics
STMICROELECTRONICS STL10N3LLH5 MOSFET Transistor, N Channel, 9A, 30V, 0.015Ω, 10V, 1V
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