| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 5 Pin |
| Case/Package | PowerVDFN-8 |
| Number of Positions | 5 Position |
| Drain to Source Resistance (on) (Rds) | 0.0038 Ω |
| Polarity | N-Channel |
| Power Dissipation | 50 W |
| Threshold Voltage | 1 V |
| Drain to Source Voltage (Vds) | 30 V |
| Continuous Drain Current (Ids) | 17A |
| Rise Time | 30 ns |
| Input Capacitance (Ciss) | 1690pF @25V(Vds) |
| Input Power (Max) | 2 W |
| Fall Time | 12 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 2W (Ta), 50W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Recommended for New Designs |
| Packaging | Tape & Reel (TR) |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The STL17N3LLH6 is a N-channel Power MOSFET housed in a PowerFLAT™ package. The device developed using the 6th generation of STripFET™ DeepGATE™ technology with a new gate structure.
● RDS (ON) x Qg industry benchmark
● Extremely low ON-resistance RDS (ON)
● High avalanche ruggedness
● Low gate drive power losses
● Very low switching gate charge
● -55 to 150°C Operating junction temperature range
ST Microelectronics
2 Pages / 0.91 MByte
ST Microelectronics
14 Pages / 1 MByte
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