| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 600 V |
| Current Rating | 400 mA |
| Case/Package | TO-261-4 |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 8 Ω |
| Polarity | N-Channel |
| Power Dissipation | 3.3 W |
| Threshold Voltage | 3 V |
| Drain to Source Voltage (Vds) | 600 V |
| Breakdown Voltage (Drain to Source) | 600 V |
| Continuous Drain Current (Ids) | 500 mA |
| Rise Time | 5 ns |
| Input Capacitance (Ciss) | 156pF @25V(Vds) |
| Input Power (Max) | 3.3 W |
| Fall Time | 25 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 3.3W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 6.5 mm |
| Size-Width | 3.5 mm |
| Size-Height | 1.8 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The STN1HNK60 is a 600V N-channel SuperMESH™ MOSFET with extreme optimization of well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Improved gate charge and lower power dissipation to meet today"s challenging efficiency requirements.
● Extremely high dv/dt capability
● ESD improved capability
● 100% Avalanche tested
● New high voltage benchmark
● Gate charge minimized
●ESD sensitive device, take proper precaution while handling the device.
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