STN2NE10L Datasheet PDF - ST Microelectronics

Manufacturer:	ST Microelectronics
Category:	MOSFETs
Case Package:	TO-261-4
Description:	Trans MOSFET N-CH 100V 1.8A 4Pin(3+Tab) SOT-223 T/R
Documentation:	STN2NE10L Datasheet (12 Pages)Package Outline Dimension on9 Page 10 Page
Pictures:	3D Model Symbol Footprint Pinout Product Pictures

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STN2NE10L Specifications

TYPE	DESCRIPTION
Mounting Style	Surface Mount
Number of Pins	4 Pin
Voltage Rating (DC)	100 V
Current Rating	1.80 A
Case/Package	TO-261-4
Drain to Source Resistance (on) (Rds)	400 mΩ
Polarity	N-Channel
Power Dissipation	2.5W (Tc)
Drain to Source Voltage (Vds)	100 V
Breakdown Voltage (Drain to Source)	100 V
Breakdown Voltage (Gate to Source)	±20.0 V
Continuous Drain Current (Ids)	2.00 A
Rise Time	17 ns
Input Capacitance (Ciss)	345pF @25V(Vds)
Fall Time	8 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	2.5W (Tc)