| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 4 Pin |
| Case/Package | TO-261-4 |
| Number of Positions | 4 Position |
| Drain to Source Resistance (on) (Rds) | 3 Ω |
| Polarity | N-Channel |
| Power Dissipation | 3.3 W |
| Threshold Voltage | 3.75 V |
| Drain to Source Voltage (Vds) | 400 V |
| Rise Time | 8 ns |
| Input Capacitance (Ciss) | 165pF @50V(Vds) |
| Input Power (Max) | 3.3 W |
| Fall Time | 14 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 3.3W (Ta) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 6.7 mm |
| Size-Width | 3.7 mm |
| Size-Height | 1.7 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The STN3N40K3 is a SuperMESH3™ N-channel Power MOSFET combined with a new optimized vertical structure. This device boasts an extremely low ON-resistance, superior dynamic performance and high avalanche capability and rendering.
● 100% Avalanche tested
● Extremely high dV/dt capability
● Gate charge minimized
● Very low intrinsic capacitances
● Improved diode reverse recovery characteristics
● Zener-protected
● -55 to 150°C Operating junction temperature range
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