| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 4 Pin |
| Voltage Rating (DC) | -60.0 V |
| Current Rating | -2.50 A |
| Case/Package | SOT-223-3 |
| Number of Channels | 1 Channel |
| Number of Positions | 4 Position |
| Drain to Source Resistance (on) (Rds) | 200 mΩ |
| Polarity | P-Channel |
| Power Dissipation | 2.5 W |
| Threshold Voltage | 4 V |
| Drain to Source Voltage (Vds) | 60 V |
| Breakdown Voltage (Drain to Source) | 60 V |
| Breakdown Voltage (Gate to Source) | ±20.0 V |
| Continuous Drain Current (Ids) | 2.50 A |
| Rise Time | 40 ns |
| Input Capacitance (Ciss) | 850pF @25V(Vds) |
| Input Power (Max) | 2.5 W |
| Fall Time | 17 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | 65 ℃ |
| Power Dissipation (Max) | 2.5W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 6.5 mm |
| Size-Width | 3.5 mm |
| Size-Height | 1.8 mm |
| Operating Temperature | -65℃ ~ 150℃ (TJ) |
Description
●This Power MOSFET is the latest development of STMicroelectronics unique “single feature size” strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
●Features
●■ Extremely dv/dt capability
●■ 100% avalanche tested
●■ Application oriented characterization
●Application
●■ Switching applications
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