TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 4 Pin |
Voltage Rating (DC) | 30.0 V |
Current Rating | 6.50 A |
Case/Package | TO-261-4 |
Power Rating | 3.3 W |
Number of Positions | 4 Position |
Drain to Source Resistance (on) (Rds) | 0.039 Ω |
Polarity | N-Channel |
Power Dissipation | 3.3 W |
Threshold Voltage | 1 V |
Input Capacitance | 330 pF |
Drain to Source Voltage (Vds) | 30 V |
Breakdown Voltage (Drain to Source) | 30.0 V |
Breakdown Voltage (Gate to Source) | ±16.0 V |
Continuous Drain Current (Ids) | 6.50 A |
Rise Time | 100 ns |
Input Capacitance (Ciss) | 330pF @25V(Vds) |
Input Power (Max) | 3.3 W |
Fall Time | 22 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 3300 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Size-Length | 6.5 mm |
Size-Width | 3.5 mm |
Size-Height | 1.8 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
The STN4NF03L is a STripFET™ II N-channel Power MOSFET developed using unique Single Feature Size™ strip-based process. The device has extremely high packing density for low ON-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
● Low threshold drive
● -55 to 150°C Operating junction temperature range
ST Microelectronics
9 Pages / 0.16 MByte
ST Microelectronics
53 Pages / 0.88 MByte
ST Microelectronics
5 Pages / 0.04 MByte
ST Microelectronics
8 Pages / 0.09 MByte
ST Microelectronics
1 Pages / 0.13 MByte
ST Microelectronics
N-CHANNEL 30V - 0.039Ω - 6.5A SOT-223 STripFET⑩ II POWER MOSFET
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.