| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Number of Positions | 3 Position |
| Polarity | NPN |
| Power Dissipation | 40 W |
| Breakdown Voltage (Collector to Emitter) | 1200 V |
| Continuous Collector Current | 0.1A |
| hFE Min | 200 @30mA, 10V |
| Input Power (Max) | 40 W |
| DC Current Gain (hFE) | 200 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 40 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 10.4 mm |
| Size-Width | 4.6 mm |
| Size-Height | 15.75 mm |
| Operating Temperature | 150℃ (TJ) |
Amplify your current using STMicroelectronics" NPN STP03D200 Darlington transistor in order to yield a higher current gain. This Darlington transistor array"s maximum emitter base voltage is 20 V, while its maximum base emitter saturation voltage is 2@0.5mA@50mA V. This product"s maximum continuous DC collector current is 0.1 A, while its minimum DC current gain is 230@20mA@10 V|200@30mA@10V. It has a maximum collector emitter saturation voltage of 2@0.5mA@50mA V. Its maximum power dissipation is 40000 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It has a maximum collector emitter voltage of 1200 V and a maximum emitter base voltage of 20 V. This Darlington transistor array has a minimum operating temperature of -65 °C and a maximum of 150 °C.
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