| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 600 V |
| Current Rating | 10.0 A |
| Case/Package | TO-220-3 |
| Power Rating | 35 W |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.65 Ω |
| Polarity | N-Channel |
| Power Dissipation | 35 W |
| Threshold Voltage | 3.75 V |
| Input Capacitance | 1370 pF |
| Drain to Source Voltage (Vds) | 600 V |
| Breakdown Voltage (Drain to Source) | 600 V |
| Breakdown Voltage (Gate to Source) | ±30.0 V |
| Continuous Drain Current (Ids) | 10.0 A |
| Rise Time | 20 ns |
| Input Capacitance (Ciss) | 1370pF @25V(Vds) |
| Input Power (Max) | 35 W |
| Fall Time | 30 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 35W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 10.4 mm |
| Size-Width | 4.6 mm |
| Size-Height | 9.3 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The STP10NK60ZFP is a 600V N-channel Zener-protected Power MOSFET developed using SuperMESH™ technology, achieved through optimization of well established strip-based PowerMESH™ layout. In addition to a significant reduction in on resistance, this MOSFET is designed to ensure a high level of dv/dt capability for the most demanding applications. Improved gate charge and lower power dissipation to meet today"s challenging efficiency requirements.
● Extremely high dv/dt capability
● 100% Avalanche tested
● Gate charge minimized
● Zener-protected
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Power MOSFET, N Channel, 10A, 600V, 0.65Ω, 10V, 3.75V
ST Microelectronics
N-CHANNEL 600V - 0.65Ω - 10A TO-220/TO-220FP/D2PAK/I2PAK/TO-247 ZENER-PROTECTED SUPERMESH POWER MOSFET
ST Microelectronics
N-channel 600V - 0.65Ω - 10A - I2/D2PAK - TO-220/FP - TO-247 Zener-protected SuperMESH TM Power MOSFET
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