TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Case/Package | TO-220-3 |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 0.75 Ω |
Polarity | N-Channel |
Power Dissipation | 35 W |
Threshold Voltage | 3.75 V |
Drain to Source Voltage (Vds) | 700 V |
Continuous Drain Current (Ids) | 4.50 A |
Rise Time | 19 ns |
Input Capacitance (Ciss) | 2000pF @25V(Vds) |
Input Power (Max) | 35 W |
Fall Time | 19 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 35W (Tc) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Size-Length | 10.4 mm |
Size-Width | 4.6 mm |
Size-Height | 16.4 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
The STP10NK70ZFP is a SuperMESH™ N-channel Power MOSFET offers Zener-protection and minimized gate charge. The SuperMESH™ is obtained through an extreme optimization of ST"s well established strip-based PowerMESH™ layout. In addition to pushing ON-resistance significantly down, special care is taken to ensure a very good dV/dt capability for the most demanding applications.
● Extremely high dV/dt capability
● 100% Avalanche tested
● Very good manufacturing repeatability
ST Microelectronics
13 Pages / 0.26 MByte
ST Microelectronics
15 Pages / 0.44 MByte
ST Microelectronics
N-CHANNEL 700V - 0.75Ω - 8.6A TO-220/TO-220FP ZENER-PROTECTED SUPERMESH POWER MOSFET
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