| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 430 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 90 W |
| Threshold Voltage | 3 V |
| Drain to Source Voltage (Vds) | 650 V |
| Continuous Drain Current (Ids) | 4.50 A |
| Rise Time | 8 ns |
| Input Capacitance (Ciss) | 850pF @50V(Vds) |
| Input Power (Max) | 90 W |
| Fall Time | 20 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 90W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Recommended for New Designs |
| Packaging | Tube |
| Size-Length | 10.4 mm |
| Size-Width | 4.6 mm |
| Size-Height | 15.75 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
In addition to amplifying electronic signals, you"ll be able to switch between various lines with the STP10NM65N power MOSFET, developed by STMicroelectronics. Its maximum power dissipation is 90000 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes mdmesh technology. This N channel MOSFET transistor operates in enhancement mode.
ST Microelectronics
17 Pages / 0.51 MByte
ST Microelectronics
17 Pages / 1.48 MByte
ST Microelectronics
N-channel 650V - 0.43Y - 9A - TO-220/FP- IPAK - DPAKN-channel 650V - 0.43Y - 9A - TO-220/FP- IPAK - DPAKSecond genera...
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