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STP110N8F6
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STP110N8F6 Datasheet PDF - ST Microelectronics

Manufacturer:ST Microelectronics
Category:MOSFETs
Case Package:TO-220-3
Description:TO-220 N-CH 80V 110A
Documentation:STP110N8F6 Datasheet (14 Pages)Package Outline Dimension on9 Page10 Page11 Page
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STP110N8F6 Datasheet PDF (14 Pages)
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STP110N8F6 Specifications

TYPEDESCRIPTION
Mounting StyleThrough Hole
Number of Pins3 Pin
Case/PackageTO-220-3
Number of Channels1 Channel
Drain to Source Resistance (on) (Rds)5.6 mΩ
PolarityN-CH
Power Dissipation200 W
Threshold Voltage2.5 V
Drain to Source Voltage (Vds)80 V
Breakdown Voltage (Drain to Source)80 V
Continuous Drain Current (Ids)110A
Rise Time61 ns
Input Capacitance (Ciss)9130pF @40V(Vds)
Fall Time48 ns
Operating Temperature (Max)175 ℃
Operating Temperature (Min)-55 ℃
Power Dissipation (Max)200W (Tc)
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STP110N8F6 Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusActive
PackagingTube
Size-Length10.4 mm
Size-Width4.6 mm
Size-Height15.75 mm
Operating Temperature-55℃ ~ 175℃ (TJ)
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STP110N8F6 Documents

STP110N8F6 Datasheet
ST Microelectronics
14 Pages / 0.52 MByte
STP110N8F6 Other Datasheet PDF
ST Microelectronics
14 Pages / 0.52 MByte
STP110N8F6 Packaging
ST Microelectronics
13 Pages / 0.53 MByte

STP110N8 Documents

STP110N8F6 Datasheet PDF
ST Microelectronics
TO-220 N-CH 80V 110A
STP110N8F7 Datasheet PDF
ST Microelectronics
TO-220 N-CH 80V 80A
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