STP110N8F7 Datasheet PDF - ST Microelectronics

Manufacturer:	ST Microelectronics
Category:	MOSFETs
Case Package:	TO-220-3
Description:	TO-220 N-CH 80V 80A
Documentation:	STP110N8F7 Datasheet (14 Pages)Package Outline Dimension on9 Page 10 Page 11 Page STP110N8F7 User Reference Manual Guide (24 Pages)STP110N8F7 Application Note (20 Pages)
Pictures:	3D Model Symbol Footprint Pinout Product Pictures

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STP110N8F7 Specifications

TYPE	DESCRIPTION
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Number of Channels	1 Channel
Drain to Source Resistance (on) (Rds)	7.5 mΩ
Polarity	N-CH
Power Dissipation	170 W
Threshold Voltage	2.5 V
Drain to Source Voltage (Vds)	80 V
Breakdown Voltage (Drain to Source)	80 V
Continuous Drain Current (Ids)	80A
Rise Time	95 ns
Input Capacitance (Ciss)	3435pF @40V(Vds)
Fall Time	32 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	55 ℃
Power Dissipation (Max)	170W (Tc)