| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.68 Ω |
| Polarity | N-Channel |
| Power Dissipation | 190 W |
| Threshold Voltage | 4 V |
| Drain to Source Voltage (Vds) | 950 V |
| Continuous Drain Current (Ids) | 10A |
| Rise Time | 16 ns |
| Input Capacitance (Ciss) | 1620pF @100V(Vds) |
| Input Power (Max) | 190 W |
| Fall Time | 21 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 190W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 10.4 mm |
| Size-Width | 4.6 mm |
| Size-Height | 15.75 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The STP13N95K3 is a SuperMESH3™ N-channel Power MOSFET offers Zener-protection and minimized gate charge. This SuperMESH3™ Power MOSFET is the result of improvements applied to STMicroelectronics" SuperMESH™ technology, combined with a new optimized vertical structure. This device boasts an extremely low ON-resistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most demanding applications.
● Extremely large avalanche performance
● Very low intrinsic capacitance
ST Microelectronics
15 Pages / 0.63 MByte
ST Microelectronics
1 Pages / 0.09 MByte
ST Microelectronics
4 Pages / 0.01 MByte
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