TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Case/Package | TO-220-3 |
Polarity | N-CH |
Power Dissipation | 300 W |
Drain to Source Voltage (Vds) | 55 V |
Continuous Drain Current (Ids) | 80A |
Rise Time | 150 ns |
Input Capacitance (Ciss) | 5300pF @25V(Vds) |
Input Power (Max) | 300 W |
Fall Time | 45 ns |
Operating Temperature (Max) | 175 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 300W (Tc) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Size-Length | 10.4 mm |
Size-Width | 4.6 mm |
Size-Height | 9.15 mm |
Operating Temperature | -55℃ ~ 175℃ (TJ) |
Compared to traditional transistors, STP141NF55 power MOSFETs, developed by STMicroelectronics, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 300000 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. This N channel MOSFET transistor operates in enhancement mode.
ST Microelectronics
15 Pages / 0.34 MByte
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