| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Power Dissipation | 25 W |
| Drain to Source Voltage (Vds) | 120 V |
| Rise Time | 25 ns |
| Input Capacitance (Ciss) | 460pF @25V(Vds) |
| Fall Time | 8 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 25W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 10.4 mm |
| Size-Width | 4.6 mm |
| Size-Height | 9.3 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
Description
●This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency isolated DC-DC converters for Telecom and Computer application. It is also intended for any application with low gate charge drive requirements
●■ Exceptional dv/dt capability
●■ Application oriented characterization
ST Microelectronics
14 Pages / 0.3 MByte
ST Microelectronics
105 Pages / 2.01 MByte
ST Microelectronics
N-CHANNEL 120V - 0.16Ω - 14A TO-220/TO-220FP LOW GATE CHARGE STRIPFET POWER MOSFET
ST Microelectronics
N-CHANNEL 120V - 0.16Ω - 14A TO-220/TO-220FP LOW GATE CHARGE STripFET POWER MOSFET
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