| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Polarity | N-Channel |
| Power Dissipation | 90 W |
| Drain to Source Voltage (Vds) | 250 V |
| Continuous Drain Current (Ids) | 6.50 A |
| Rise Time | 17 ns |
| Input Capacitance (Ciss) | 680pF @25V(Vds) |
| Fall Time | 17 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 100W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Recommended for New Designs |
| Packaging | Tube |
| Size-Length | 10.4 mm |
| Size-Width | 4.6 mm |
| Size-Height | 9.15 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
Description
●This Power MOSFET series realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any applications with low gate drive requirements.
●Features
●■ Exceptional dv/dt capability
●■ 100% avalanche tested
●■ Application oriented characterization
●Application
●■ Switching applications
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