TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Case/Package | TO-220-3 |
Power Dissipation | 130 W |
Input Capacitance | 1030 pF |
Drain to Source Voltage (Vds) | 600 V |
Rise Time | 15.5 ns |
Input Capacitance (Ciss) | 1030pF @50V(Vds) |
Input Power (Max) | 130 W |
Fall Time | 18 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 110W (Tc) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Size-Length | 10.4 mm |
Size-Width | 4.6 mm |
Size-Height | 15.75 mm |
Operating Temperature | 150℃ (TJ) |
N-Channel 600V 13A (Tc) 110W (Tc) Through Hole TO-220
ST Microelectronics
22 Pages / 1.38 MByte
ST Microelectronics
23 Pages / 1.36 MByte
ST Microelectronics
22 Pages / 1.38 MByte
ST Microelectronics
STMICROELECTRONICS STP18NM60N Power MOSFET, N Channel, 13A, 600V, 0.26Ω, 10V, 3V
ST Microelectronics
N-channel 600V, 0.25Ω typ., 13A FDmesh(TM) II Power MOSFET (with fast diode) in TO-220 package
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