| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.2 Ω |
| Polarity | N-Channel |
| Power Dissipation | 125 W |
| Threshold Voltage | 3 V |
| Drain to Source Voltage (Vds) | 600 V |
| Continuous Drain Current (Ids) | 16A |
| Input Capacitance (Ciss) | 1300pF @50V(Vds) |
| Input Power (Max) | 125 W |
| Fall Time | 38 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 125W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The STP22NM60N is a MDmesh™ II N-channel Power MOSFET features low input capacitance and gate charge. This device is made using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company"s strip layout to yield one of the world"s lowest ON-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
● 100% Avalanche tested
ST Microelectronics
23 Pages / 0.96 MByte
ST Microelectronics
12 Pages / 0.33 MByte
ST Microelectronics
1 Pages / 0.09 MByte
ST Microelectronics
4 Pages / 0.01 MByte
ST Microelectronics
N-CHANNEL 600V - 0.19Ω - 22A TO-220/FP/D2PAK/I2PAK MDMESH POWER MOSFET
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
