| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Drain to Source Resistance (on) (Rds) | 0.085 Ω |
| Polarity | N-Channel |
| Power Dissipation | 160 W |
| Threshold Voltage | 4 V |
| Drain to Source Voltage (Vds) | 650 V |
| Continuous Drain Current (Ids) | 27A |
| Rise Time | 12 ns |
| Input Capacitance (Ciss) | 3750pF @100V(Vds) |
| Input Power (Max) | 160 W |
| Fall Time | 16 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 160W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Recommended for New Designs |
| Packaging | Tube |
| Material | Silicon |
| Size-Length | 10.4 mm |
| Size-Width | 4.6 mm |
| Size-Height | 15.75 mm |
| Operating Temperature | 150℃ (TJ) |
Do you require the advantages of traditional transistors coupled with the switching benefits of power MOSFETs? STMicroelectronics" STP35N65M5 power MOSFET can provide a solution. Its maximum power dissipation is 160000 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This N channel MOSFET transistor operates in enhancement mode. This device is made with mdmesh technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
ST Microelectronics
22 Pages / 1.24 MByte
ST Microelectronics
4 Pages / 0.01 MByte
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